MOCVD Product Specification

SYSTEMMOCVD
MATERIAL TYPEAsP, GaN, II/VI, SiC
ENVELOPE16'L x 4'W x 7'H
FACILITIES
Power208VAC; 50/60 Hz; 100A
Water80 psig; 10g/min
Ventilation1200 cuft/min
    ELECTRONICS CONSOLE
  • Device Net Protocol
  • PLC/Computer MMI
  • Touch Screen Monitor
  • Closed Loop Optical Pyrometry
  • 15 KW Power Supply
    GAS PROCESSING
  • 12 Alkyls (Bubblers)
  • 8 Hydrides/Dopants
  • 2 Carrier Gases (N2, H2)
  • Source Concentration Monitoring
  • Point of use Purification Available
    REACTOR & GLOVEBOX
  • High Efficiency Design (low gas usage)
  • 75 to 200 mm platter Capable
  • Radiant Heating
  • Water Cooling (of high temp. surfaces)
  • Inert Atmosphere Glove Box (Nitrogen)
    EXHAUST & ABATEMENT
  • Dry Process Pump
  • Regenerable Abatement
MOCVD Equipment

Deposition Chamber with Linear Transfer Loadlock